Ultra-fast voltage clamping for fast power-semiconductor modules | ||||||
Author(s) | Jan FUHRMANN | |||||
Abstract | The fast switching of 1200/1700-V semiconductors, like silicon carbide MOSFET or optimized IGBTs, is often limited by the parasitic inductance due to overvoltages during switching. To utilize the full switching speed a very low-inductive package or a very fast overvoltage limitation is necessary. Withinthis paper, an ultra-fast voltage clamping is presented which is placed as close as possible to the switching devices. | |||||
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Type | Members Only | |||||
Date | Last modified 2020-08-14 by System | |||||
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