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   Ultra-fast voltage clamping for fast power-semiconductor modules   [View] 
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 Author(s)   Jan FUHRMANN 
 Abstract   The fast switching of 1200/1700-V semiconductors, like silicon carbide MOSFET or optimized IGBTs, is often limited by the parasitic inductance due to overvoltages during switching. To utilize the full switching speed a very low-inductive package or a very fast overvoltage limitation is necessary. Withinthis paper, an ultra-fast voltage clamping is presented which is placed as close as possible to the switching devices. 
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Filename:0332-epe2019-full-14362519.pdf
Filesize:494.7 KB
 Type   Members Only 
 Date   Last modified 2020-08-14 by System