| Abstract |
Life time prediction and thermal management are among the key issues regarding the performance of today's semiconductor devices. And a fast and accurate thermal model can be used to tackle those problems more efficiently. In this paper, different thermal models of an IGBT power module have been established and compared. Firstly, a 3D finite element method (FEM) model is simulated in COMSOL. And then, a lumped parameter thermal model with considering different aspects (heat spreading and thermal coupling) is derived. The simulation indicates that the proposed model can achieve a relatively accurate result within a short simulation time. |
