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Thermal measurement of dissipated power for Gallium Nitride Gate Injection Transistors
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| Author(s) |
Leszek WYDZGOWSKI |
| Abstract |
In this paper, a novel thermal measurement of power dissipation for Gallium Nitride (GaN) Gate InjectionTransistors (GITs) is presented. The novelty of this approach lies in utilization of a reverse conducting operation mode of power devices to determine the dependency between the dissipated power and a stable temperature of transistors. Power dissipation of a prototype DC-DC power converter has been investigated for various scenarios by using the proposed thermal method. |
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| Filename: | 0612-epe2019-full-22351138.pdf |
| Filesize: | 1.066 MB |
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| Type |
Members Only |
| Date |
Last modified 2020-08-14 by System |
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