| Abstract |
The aim of this paper is to provide an analytical model of the power devices turn-off in a Silicon Carbide (SiC) MOSFETs-based inverter leg. In the proposed modeling approach, different methods have been evaluated to characterize the transconductance profiles, which play a key role in the switching behavior of the power devices. The proposed modeling method represents a good compromise between computational efforts and accuracy. The last has been evaluated by comparing simulation results with experimental tests, under different operating conditions. |
