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Simulation of current crowding in inverse diodes of low-voltage Si MOSEFTs at power cycling
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| Author(s) |
Christian SCHWABE |
| Abstract |
Experimental results showed large difference in power cycling capability when a low voltage MOSFET (inf.100V) is tested in MOSFET mode (1. quadrant) or as inverse body diode (3. quadrant) under the same thermal stress conditions. This paper is focusing on a three dimensional (3D) simulation investigating the difference in lifetime estimation. The simulation is carried out in ANSYS as a coupled thermo-electrical simulation with a new developed approach for the diode characteristic. The results of the simulation are showing wide differences in temperature distribution and current density. Strong current crowding during the operation of the inverse body diode was observed. This leads to more stress in the bond interconnections, which gives an explanation for the different lifetime in the experimental investigation. |
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| Filename: | 0457-epe2019-full-16260918.pdf |
| Filesize: | 1.526 MB |
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| Type |
Members Only |
| Date |
Last modified 2020-08-14 by System |
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