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SiC Diode Characterization using Pulsed S-Parameter Measurements
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| Author(s) |
Martin HERGT |
| Abstract |
Considering to power converter systems, the characterization and modeling of wide band gap semiconductors at switching frequencies in the MHz area are very important. In the following a method is presented in order to characterize and build up a non-linear model for a diode at frequencies up to 500 MHz. |
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| Filename: | 0427-epe2019-full-14504343.pdf |
| Filesize: | 770.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2020-08-14 by System |
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