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   Silicon Nonlinear Capacitors   [View] 
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 Author(s)   H. Hakim; J-P. Laur; J-L Sanchez; E. Scheid; P. Dubreuil 
 Abstract   This paper is focused on the integration of nonlinear capacitors for power electronics applications. We study more particularly a structure based on a trench topology and combining MOS and PN junction capacitance effects. Static and dynamic behaviour of the device are analyzed thanks to simulations. A specifical peripheral termination for deep trench devices is proposed. Finally we present the main process steps and the electrical characterization results of the first prototypes. 
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Filename:EPE2001 - PP00279 - Hakim.pdf
Filesize:180.4 KB
 Type   Members Only 
 Date   Last modified 2004-03-10 by System