| Abstract |
Due to high switching speed of SiC MOSFET, the possibilities for determining the losses by directmeasurement methods are difficult. This article describes the modeling of losses based on datasheetvalues and by considering the actual operation point. By classifying the typical switching processes,the losses are determined with a simple case based and efficient state model simulation, where thelosses are considered at once by an analytical and lock up table based approach. This leads to a fastersimulation compared to a complete behavioral model where the switching is continuously simulated.The results are verified by calorimetric measurements and show a remarkable convergence. |
