| Abstract |
This paper explores the possibility to achieve an integrated circuit with GaN transistors for power electronics applications. GaN provides only N type transistors. Power transistors are presented with the layout and standard useful characterization results at wafer level and chip level. A gate driver is shown, layout and performance, it demonstrates the difficulty to obtain fast rising edges using only type N type transistors. Another key function for integrated circuit is the level shifter, here a circuit capable of shifting a logic level up above the common rail of an inverter leg switching up to 400V at 1MHz. Finally, an integrated inverter leg is presented and tested switching 400V at 1MHz under 3A. |
