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Expansion of the Junction Temperature Measurement via the Internal Gate Resistance to a wide range of Power Semiconductors
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| Author(s) |
Tobias KESTLER |
| Abstract |
The temperature dependent internal gate resistance Rgi of MOS devices is suitable for online Tj acquisition in operating application circuits. Recent publications have shown various measurement approaches and tested them for specific DUTs. In this work the issues arising when applying the Rgi-method to DUTs with a low Rgi and to SiC MOSFETs are described. If a device exhibits a low Rgi the measurement error due to parasitic resistance becomes relevant. For SiC MOSFETs frequency dependent effects, which can presumably be attributed to charge trapping at the gate oxide, have a significant influence on the measured data. |
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| Filename: | 0303-epe2019-full-12071323.pdf |
| Filesize: | 1.054 MB |
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| Type |
Members Only |
| Date |
Last modified 2020-08-14 by System |
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