| |
Enhancement of Thermo-mechanical Behavior of IGBT Modules through Engineered Threshold Voltages
| [View]
[Download]
|
| Author(s) |
Mohsen AKBARI |
| Abstract |
In this paper, a purposely-imbalanced current density distribution in insulated-gate bipolar transistor(IGBT) chips is introduced to reduce the surface temperature inhomogeneity of standard chipstechnology. The idea is implemented by modifying the gate threshold voltage across the active chiparea, to counteract the uneven temperature distribution of a standard IGBT chip. Coupled thermomechanical analysis realized by finite element method (FEM) is used for validating the engineered IGBT chip via comparing different layouts. |
| Download |
| Filename: | 0413-epe2019-full-15224148.pdf |
| Filesize: | 668.2 KB |
|
| Type |
Members Only |
| Date |
Last modified 2020-08-14 by System |
| |
 |