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Applying a 3300V SiC Half-bridge to an MMC Based HVDC System
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| Author(s) |
Fabian HOHMANN |
| Abstract |
A 3.3 kV silicon carbide (SiC) MOSFET is analyzed for the use in a modular multilevel converter (MMC). A laboratory-setup of a submodule is built to characterize the switching behavior. The total losses are calculated for the MMC operation. A comparison to a silicon (Si) based IGBT model is made based on losses and the necessary semiconductor area. |
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| Filename: | 0247-epe2019-full-18203269.pdf |
| Filesize: | 1.297 MB |
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| Type |
Members Only |
| Date |
Last modified 2020-08-14 by System |
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