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Analysis of a 1200 V SiC-Si-Hybrid Switch for Resonant Applications with Consideration of Bipolar Desaturation
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| Author(s) |
Michael MEISSNER |
| Abstract |
Hybrid switches consisting of a silicon carbide MOSFET and a silicon IGBT are a promising approachfor power loss reduction in resonant topologies. Potentials and performance are analysed and discussedwith consideration of desaturation of the IGBT. |
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| Filename: | 0327-epe2019-full-15073340.pdf |
| Filesize: | 2.263 MB |
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| Type |
Members Only |
| Date |
Last modified 2020-08-14 by System |
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