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   An Experimental Evaluation of Non-Isolated Switched Inductor Boost Converters using GaN HEMTs for Building-Integrated Photovoltaics Applications   [View] 
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 Author(s)   Paul VAN HEMELDONCK 
 Abstract   In this paper, the use of switched inductor boost converters is evaluated for Building-Integrated PhotoVoltaics (BIPV) DC/DC converter applications. BIPV is a demanding application in terms of gain, temperature, compactness and desired lifetime. In previous work, transformer isolated topologies were investigated for BIPV module frame-integration. This work will focus on the use of non-isolated high step-up DC/DC converters with switched inductor cells and wide band gap GaN switches. Wide band gap technology allows to operate the converters at higher switching frequencies compared to state-of-the-art solutions, which in turn leads to smaller inductors and a higher power density. The working principle of switched inductor cells is discussed and lay-out recommendations for practical converter design are highlighted. Efficiency results using GaN experimental evaluation boards from different manufacturers are presented. From thermal boundary conditions, the required amount of interleaved converters is discussed. 
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Filename:0456-epe2019-full-09173058.pdf
Filesize:2.142 MB
 Type   Members Only 
 Date   Last modified 2020-08-14 by System