| |
A Simple SiC MOSFET Three Level Inverter Topology for High Performance Shunt Active Power Filter
| [View]
[Download]
|
| Author(s) |
Rodrigo GUZMAN ITURRA |
| Abstract |
A highly efficient three level (3L) topology based entirely in silicon carbide (SiC) semiconductors for a shunt active power filter is presented. The proposed topology has an efficiency superior to conventional all SiC 3L topologies for switching frequencies above 70 kHz. Further, for high currents, the proposed topology has the advantage that can be built just by cascading two 2L SiC modules. |
| Download |
| Filename: | 0460-epe2019-full-16321190.pdf |
| Filesize: | 4.543 MB |
|
| Type |
Members Only |
| Date |
Last modified 2020-08-14 by System |
| |
 |