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A New SiC Power MOSFET Model With a Parameter Optimization Procedure
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| Author(s) |
Ali ALHOUSSEIN |
| Abstract |
In this paper, a characterization and comparison of SPICE models developed by two leading manufacturers of SiC power MOSFETs is carried out. A new SiC power MOSFET model is proposed which combines different aspects of the two manufacturers' models. A fitting algorithm is developed and then used to adjust the new model's parameters to performance data of SiC power MOSFETs. |
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| Filename: | 0223-epe2019-full-15345018.pdf |
| Filesize: | 2.761 MB |
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| Type |
Members Only |
| Date |
Last modified 2020-08-14 by System |
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