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STUDIES OF REVERSE RECOVERY EFFECTS IN POWER FAST RECOVERY DIODES
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| Author(s) |
G. Vaher; V. Ruhamkin; M. Tarma |
| Abstract |
The possibilities of controlling the minority carrier lifetime of electron and proton irradiation and platinum diffusion are compared. The investigations the reverse recovery parameters in the range of temperature 25°c...180°c with the interval 10°c point to the increasing trr with temperature by abrupt steps. The lowest values of trr (1.3 ... 1.5 us) and Krr (1.1 ... 1.2) are obtained by proton irradiation and one side platinum diffusion as a result of low lifetime value in P+P emitter. |
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| Filename: | Unnamed file |
| Filesize: | 2.028 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-08-15 by System |
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