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BIDIRECTIONAL OPTOELECTRONIC THYRISTORS RATED AT 80 A, 1200 V
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| Author(s) |
N. A. Tetervova; R. I. Rybak; V. A. Zlobin; Z. I. Kafengauz |
| Abstract |
The paper presents results of investigations aimed at designing production prototypes of bidirectional optoelectronic thyristors (optotriacs) rated at a current to 80 A and a repetitive peak voltage to 1,200V. Main geometrical and electrophysical parameters of optotriac structures are calculated, and the interconnection of those with photosensitivity and dynamic characteristics is studied. By using infra-red equipment and a method of scanning electron microscopy specific features of switching processes in a turned-on-by-light, five-layer n-p-n-p-n structure having an amplifying gate are investigated. On the basis of the investigations a design and technological methods of fabricating high-power optotriacs are developed. Optotriac prototypes have been fabricated and tested. |
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| Filename: | Unnamed file |
| Filesize: | 2.794 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-08-15 by System |
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