| Abstract |
The purpose of this paper is to study the thermal transit of IGBT for using it in high power high frequency operations. Firstly the high temperature behaviour of silicon have been analysed above standard limits and the consequences on electrical parameters have been defined. Secondly, the components, which are able to operate in the 600 V - 400 A range, have been studied in order to evaluate losses and maximum switching frequency. Furthermore, experiments have been made on IGBT transistors. Owing to electrical junction temperature measurement, a thermal model has been established and compared with a simulated model. |
