| Abstract |
The switching behavior of Gate Turn Off thyristor with shorted anode emitter has been calculated numerically by solving the semiconductor basic equations in an "equivalent" one-dimensional model device. It is taken into account of all significant physical semiconductor mechanisms and the interaction with a non-ideal external circuit is considered. Computations, using this model, are made on micro-computers and successfully compared with the results of measurements conducted at the INRETS's LTN-laboratory on a number of anode shorted GTO's of different origins. Short circuits between anode emitter and N-base are taken into account by an additional term in the electron recombination rate. lt is shown that the calculated switching behavior for a given device remain accurate when the external circuit is changed. The computational time of a turn-off simulation is approximately 40 minutes with a personal computer such as IBM-PC's or Macimosh Il's. Owing to the results obtained and the accurate description of the tailing current waveforms on a number of GTO's with different circuits of operation, such a simulation model is found to be a valuable tool for circuit design and device selection. |
