| Abstract |
Thermal response curves used to calculate the peak junction temperature of power semiconductors are normally derived by experimental identification of the parameters of a known model. Unfortunately the model, developed many years ago, is inappropriate for large surges of short time duration, as they are encountered in present day power conditioning systems. An alterative model is derived, the limits of its accuracy are estimated, and a correction factor is elaborated. A verification of the accuracy of the two methods is also presented. Physical characteristics of popular MOSFET and IGBT dies are also provided to allow the reader to calculate the rise in junction temperature in specific applications. |
