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COMBINED OVERCURRENT AND OVERTEMPERATURE PROTECTION WITH SENSEFETS
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| Author(s) |
W. G. Dunford; G. Liu |
| Abstract |
The application of a rugged protection circuit in an FET-based photovoltaic powered inverter drive is described. The circuit is based on the charactetistics of the International Rectifier HEXSense FET and does not require any direct current or temperature input. A simple switching arrangement is used to vary the resistance connected to the FET sense terminals. With a high resistance the sense voltage is effectively the voltage across the temperature dependent channel resistance of the FET. A small external resistance swamps the effect of the channel resistance and develops a voltage which is primarily a function of the channel current. A comparison of the two voltages allows the device temperature to be estimated. |
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| Filename: | Unnamed file |
| Filesize: | 2.024 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-08-12 by System |
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