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   Comparison of Semiconductor Device Losses in Hard Switched and Zero Voltage Switched Inverter Systems   [View] 
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 Author(s)   M. Dehmlow; K. Heumann; R. Sommer 
 Abstract   This paper presents a detailed investigation of losses in IGBT modules in hard switched PWM and Zero Voltage Switched Inverter Systems. To measure the semiconductor device losses a one phase test circuit in which the semiconductor devices are stressed in similar way as in a real inverter system is described. The test circuit allows the investigation of the semiconductor devices in a hard switched inverter, an Active Clamped Resonant DC Link Inverter, and an Auxiliary Resonant Commutated Pole Inverter. 
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Filename:Unnamed file
Filesize:3.785 MB
 Type   Members Only 
 Date   Last modified 2019-07-25 by System