| Abstract |
It has been realized a very high power MCT device (2kV, 5kA) of 80mm in diameter. In order to produce a such device with an acceptable yield, it is necessary to utilize the "Wafer Repairing Technique", that consist in making on the same wafer or chip an over number of elementary devices in parallel and in checking them individually, eliminating the rejected ones in the contacting phase. A very high voltage edge termination made by 12 decreasing concentration rings, has been associated to this device. |
