| Filename: | Unnamed file |
| Filesize: | 2.195 MB |
| TEMPERATURE VARIATION EFFECTS ON THE SWITCHING CHARACTERISTICS OF MOS-GATE DEVICES | ||||||
| Author(s) | J.L. Hudgins; S. Menhart; W.M. Portnoy; V.A. Sankaran | |||||
| Abstract | The switching performance of power mosfet's, insulated gate bipolar transistors, and mos-controlled thyristors are evaluated and compared with respect to temperature variations from 93 to 468 K. The devices all had a similar forward blocking voltage rating of near 1 kV, and current ratings that were matched as closely as possible. All the devices were operated up to their maximum possible frequency, 2 MHz, 500 kHz, and 200 kHz, for the MOSFETs, IGBT's, and MCT's, respectively. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2019-07-16 by System | |||||
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