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FAILURE MECHANISMS AND NONDESTRUCTIVE TESTING OF POWER BIPOLAR AND MOS GATED TRANSISTORS
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| Author(s) |
David L. Blackburn |
| Abstract |
Failure mechanisms and nondestructive testing of power bipolar and MOS gated devices are discussed. Bipolar transistor failures are initiated at relatively low temperatures and these devices can be tested nondestructively. Modern MOS gated device failure is initiated at temperatures far in excess of those normally considered safe and can not be tested nondestructively today. The key to nondestructive testing is the ability to sense the onset of failure and to then remove all power from the transistor before the device temperature rises high enough to cause damage. |
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| Filename: | Unnamed file |
| Filesize: | 3.281 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-16 by System |
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