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DRIVING AND PROTECTION CIRCUITRY FOR A SMART POWER MOS HIGH-SIDE SWITCH BASED ON A FLOATING WELL CONCEPT
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| Author(s) |
M. Bafleur; J. Buxo; Ph. Givelin; V. Macary |
| Abstract |
This paper presents a new driving circuitry for MOS power high-side switch which is based on a single epitaxy CMOS/DMOS technology and a floating well concept. lt is shown that this latter concept allows to avoid latch-up initiation and use of parasitic vertical bipolar transistor as an active device. This parasitic device is advantageously used in the proposed driving circuit. lndeed, it permitS to achieve fast charging of the DMOS gate in a very compact form and to obtain power device protection during the discharge of an inductive load. These circuits have been studied with the aid of SPICE simulations using macromodels for the DMOS device. |
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| Filename: | Unnamed file |
| Filesize: | 2.161 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-11 by System |
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