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AN INTRINSIC SAVE SMART POWER IGBT
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| Author(s) |
R. Gabriel |
| Abstract |
SOI technology enables the integration of vertical power transistors and Smart Power features like gate drive, overcurrent and overtemperature shutdown circuitry. Using dielectric isolation technics virtually all power transistor families and integrated circuit technologies can be merged. Due to the good conformity to standard semiconductor technologies Iike DMOS and CMOS it seems to be a good candidate for future high voltage smart power technologies. The benefits and limitations of this technology will be discussed with a high voltage smart power IGBT using SOI technology. The power transistor is of the IGBT type enabling a higher current density compared to MOS devices. |
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| Filename: | Unnamed file |
| Filesize: | 1.673 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-11 by System |
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