| |
A NOVEL DEVICE STRUCTURE FOR LOW VOLTAGE TRANSIENT PROTECTION
| [View]
[Download]
|
| Author(s) |
R. Wilson; H. S. Gamble; A. S. Hudson |
| Abstract |
A novel structure based on an amplifying gate thyristor for the protection of sensitive electronic devices against high energy overvoltage transients is presented which can be fabricated inexpensively using a standard four mask planar process. The structure permits control of the turn-on process, and enables a large area of the device to be switched into conduction very rapidly. Turn on times of 1 μsec have been observed. The ON state trigger voltage is determined by the avalanche breakdown voltage of a double diffused n+p diode. Devices with triggering voltages as low as 10 volts and with holding currents up to 1200 mA were produced. Test showed that the protectors yielded excellent repeatability in breakover voltage throughout a typical lifetime of operation. Leakage currents in the OFF state prior to triggering were found to be very small - typically < 10 nA - due primarily to the structure used. 3.2 mm² devices were found to absorb currents up to 107 A on a 10 μsec/1000 μsec exponential current waveform with forward voltages of 5 volts, demonstrating the suitability of such a structure for surge protection. |
| Download |
| Filename: | Unnamed file |
| Filesize: | 3.845 MB |
|
| Type |
Members Only |
| Date |
Last modified 2019-06-11 by System |
| |
 |