| Abstract |
In this paper, the properties of Power MOSFETs with a current sensing function (e.g. SENSEFET. HEXSense,....) are studied. An electrical equivalent circuit compatible with the SPICE IIG6 software is described. This model doesn't result in the straightforward paralleling of two MOSFETs as previously published [1]; instead, it accounts for the modulation of the sensing part On-state resistance by the operating state of the power part. Some of the basic properties of the "current mirror" capability of such integrated structures are considered, e.g., current vs. cell number ratio, the sealing-down effect, the dynamic characteristics. Simulations of switching circuits, and comparisons with experimental results are also presented. |
