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COMPARISON OF MOS-GATED BIPOLAR TRANSISTOR STRUCTURES
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| Author(s) |
J. S. Ajit; B. J. Baliga; S. Tandon; A. Reisman |
| Abstract |
Simulation and experimental characteristics of a variety of MOS-gated bipolar transistor structures are compared, and a new monolithic MOS-gated bipolar transistor called the Base-Emitter Switched Transistor (BEST) is presented. The new device features a vertical n-channel MOSFET providing the base drive for a vertical NPN bipolar transistor; a lateral enhancement mode n-channel MOSFET for emitter-switching and a lateral depletion mode p-channel MOSFET for base-switching. Simulation results indicate the superiority of the BEST device compared to a power MOSFET and fast-switching IGBTs. These device structures have been fabricated using a DMOS process and experimental measurements corroborate the simulation results. |
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| Filename: | Unnamed file |
| Filesize: | 2.301 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-11 by System |
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