| Abstract |
Traditional bipolar transistors and "modern" devices such as IGBTs and MOSFETs are at risk from second breakdown (SB). In MOSFETs and IGBTs, it is the parasitic bipolar transistor (PST) structures that may switch on under unfavorable operating conditions, and, in so doing, are exposed to the same dangers as bipolar transistors. To examine and better understand these processes, a test unit has been developed for the non-destructive determination of the safe operating area (SOA) of the bipolar structures. At present, devices handling up to 1200 V and 120 A can be tested and disconnected from the load circuit within t < 50 ns. |
