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THE DV/DT CAPABILITY OF POWER MOSFETS AND MERGED BIPOLAR-MOS DEVICES
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| Author(s) |
Edmond Cretu; Andrei Silard; Mirom Duta; Daniel Poenar |
| Abstract |
A thorough theoretical investigation of dV/dt-induced effects in power MOSFET's and merged bipolar-MOS devices is performed in this work. Analytical expressions enabling the estimation of dV/dt-capability as a function of devices structures and gate circuitry have been obtained. The criteria which tilt the dV/dt-triggering of MOSFETs, IGTs and MCTs toward either MOS-type or bipolar-type turn-on have been established. It was shown that the actual limitation in dV/dt-capability of power MOSFETs and IGTs is due primarily to faulty MOS-type turn-on, while in MCTs the dV/dt-capability is limited by bipolar-type turn-on. The predictive relationship developed in this work projects dV/dt-capabilities close to those recorded in experimental devices. |
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| Filename: | Unnamed file |
| Filesize: | 2.028 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-11 by System |
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