| Filename: | Unnamed file |
| Filesize: | 1.304 MB |
| CONTACT ETCHING TO INCREASE BREAKDOWN VOLTAGE OF GRADED NMOSTs | ||||||
| Author(s) | Nebojsa D. Jankovic | |||||
| Abstract | The influence of silicon contacts etch in freon plasma on short channel breakdown characteristics of Fully Graded (FG) NMOSTs has been examined. An experimental FG NMOSTs, featuring Leff=3.7μm, 8Vds=46V and BVsus=35V, has been fabricated and subjected to contacts etch process . It appears that carefully optimized plasma etching of source-drain contacts can completely eliminates bipolar-like breakdown sustaining voltage (BVsus) without affecting other FG NMOST's electrical parameters. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2019-06-11 by System | |||||
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