| Abstract |
Classically, the operating safety of MOSFET in hard switching mode and the limitation in electromagnetic radiations require an open loop acting on the gate load rate. Another disturbing rate consists of a dampened sine transient response mode corresponding to a transfer function of order 2 which can be obtained by computation using AC low signal model. The control of current and voltage gradients is proposed via a closed loop (correctors connected in parallel on MOSFET). Current sense can be implemented by shunt but, better, direct current gradient measurement can be done by a very little inductor of some nanohenries. Such driving circuits providing transient stability, current and voltage gradient control, peak current limitation as well as efficient short-circuit protection were breadboarded. Electrical measurements in good agreement with simulation results are presented. So circuit simulation tools are validated and the advantage of investigating a specific integrated intelligent driving circuit is shown . |
