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ON THE OPTIMUM SWITCHING OPERATION OF POWER MOSFETs
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| Author(s) |
M. I. Castro Simas; A. Ferreira; J. Costa Freire |
| Abstract |
This paper discusses the optimized switching behaviour of Power MOS transistors using reverse conduction through the channel, which disables body diode conduction. This
procedure is aimed at high frequency applications which require bidirectional current paths. An insight into MOSFET reverse conduction modelling is presented in order to achieve an
accurate tool for computer aided design or topologies using MOSFETs bidirectional current paths. Simulation results are shown in a most demanding topology, a series resonant converter, to evaluate the accuracy of the model. |
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| Filename: | Unnamed file |
| Filesize: | 2.897 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-11 by System |
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