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INVESTIGATIONS ON THE TURN-ON PROCESS IN FAST RECOVERY POWER DIODES
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| Author(s) |
S. Winternheimer |
| Abstract |
A model describing the transient turn-on behaviour of a fast recovery power diode is derived and implemented into a simulation program for analysis of electrical networks. The model is based on the physical processes in a p+nn+-doped diode. The time- and geometric-dependent carrier concentration in the low doped middle region which has the main influence on the turn-on process is investigated. The behaviour of this concentration is approximated by a time-dependend resistance in the middle region which causes mainly the voltage spike during the turn-on process. The model is compared to experimental measurements in a chopper circuit with a MOSFET as switching element. |
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| Filename: | Unnamed file |
| Filesize: | 2.994 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-11 by System |
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