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SILICON-ON-INSULATOR THICK FILMS PREPARED BY ZONE MELTING RECRYSTALLIZATION FOR HIGH VOLTAGE DEVICES
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| Author(s) |
R. Banisch; B. Tillack; H. H. Richter; K. Höppner; O. Joachim |
| Abstract |
SOI wafers with full dielectrically isolated island are prepared by zone melting recrystallization of a polycrystalline film deposited on a non planar silicon substrate covered with Si02 and following planarization of the wafer surface. High voltage MOS and bipolar transistors are prepared on the substrates. The transistor parameters, taken as a measure of the crystal quality, were in the technologically expected range. The breakdown voltage of the isolation oxid was about 400 V. The electrical characterization as well as crystallographic investigations demonstrate the good quality of the ZMR SOI wafers and their potential use for high voltage applications. |
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| Filename: | Unnamed file |
| Filesize: | 2.142 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-11 by System |
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