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   GROWTH OF LARGE DIAMETER HIGH PURITY SILICON SINGLE CRYSTALS WITH THE MCZ METHOD FOR POWER DEVICES APPLICATIONS   [View] 
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 Author(s)   Maria Porrini; Pietro Rossetto 
 Abstract   This paper reports the recent results of our researches on MCZ crystal growth, which have shown the feasibility of growing crystals up to 150 mm in diameter under a transverse magnetic field with consistent bulk properties such as a low oxygen content, less than 7 ppma new ASTM along all its length, and a low resistivity radial gradient. It is also shown that the MCZ technique has superior capabilities for producing high resistivity and high purity crystals than the conventional CZ technique. It is shown, both through theoretical calculations and experimental results, that the application of a transverse magnetic field to a CZ pulling apparatus reduces the crucible dissolution rate, thus reducing the impurities incorporation rate into the growing crystal. 
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Filename:Unnamed file
Filesize:2.054 MB
 Type   Members Only 
 Date   Last modified 2019-06-11 by System