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ELECTRON IRRADIATION OF POWER DIODES. COMPARISON BETWEEN FZ AND MCZ SILICON SUBSTRATES
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| Author(s) |
P. G. Fuochi; E. Gombia; R. Mosca; F. Fasce; M. lcardi; M. Portesine; P. Rossetto |
| Abstract |
A study of the influence of the starting material (float-zone (FZ) and magnetic Czochralski (MCZ) n-type silicon) and of the device processing on the characteristics of high power p-i-n diodes has been made. Lifetime reduction was achieved by 12 Mev electron irradiation. The static and dynamic electrical characteristics as well as the deep level evaluation are reported. A comparison of the results obtained from FZ and MCZ p-i-n diodes indicates that no significant difference between the two substrates exists as far as the electrical characteristics of the devices as well as the nature and concentration of deep levels are concerned. |
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| Filename: | Unnamed file |
| Filesize: | 1.989 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-11 by System |
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