| Abstract |
This paper presents a simple method for determining the deep energy level, which influences predominantly the carrier lifetime in the working temperature range of a semiconductor device, using the dependence of carrier lifetime on the current density and temperature. The type of carrier lifetime dependence on current density (excess carrier concentration) is connected with the position of a dominant deep level with respect to the Fermi energy level in the gap. When measuring dependences of the carrier lifetime on the current density at different temperatures, the dominant deep level position may be found from the change of the Fermi level position with temperature with respect to that deep level. The experimental verification was performed on power silicon diodes using the DCVD method in a larger interval of current densities and temperatures. |
