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A position-sensitive method for determination of high-level carrier lifetimes in power devices
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| Author(s) |
M. Rosling; H. Bleichner; E. Nordlander |
| Abstract |
A position-sensitive method for ambipolar lifetime measurements is developed. The measurement technique is applicable to lowly doped devices in high-level injection. The decay of excess carriers (OCCD) is utilized for the evaluation of the lifetime values. The ambipolar diffusion length may also be independently estimared. Furthermore, the diffusion constant is extracted when plotting the the information in a special manner. The investigation was performed on p-i-n diodes subject to different lifetime affection, e. g. proton and/or electron irradiations. The results from OCCD measurements are compared with results from electrical OCVD measurements. |
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| Filename: | Unnamed file |
| Filesize: | 3.607 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-10 by System |
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