| |
SILICON DIRECT BONDING FOR POWER DEVICE MANUFACTURE
| [View]
[Download]
|
| Author(s) |
C. Parkes; N. S. J. Mitchell; H. S. Gamble; B. M. Armstrong |
| Abstract |
A silicon direct bonding technique has been developed allowing cleaning and bonding of silicon wafers without touching their polished surfaces. A bond strength in excess of 100 kg/cm2 was achieved for samples annealed at temperatures of 1200°C. The suitability of the bonding process was determined by the manufacture of various silicon devices. PN junction diodes yielded N-factors of between 1.03-1.2 and high breakdown voltage when junction shifting diffusions were employed. PIN diodes, allowing the depletion region to be scanned across the weld interface, showed that a density of approximately 5x10to11 cm to-2 interface states existed. Common-emitter current gains of up to 400 were achieved for NPN transistors with the bond in the active region of the device showing that although a high density of interface states exist, their effect need not be significant. The manufacture of 8.3mm diameter Gate Turn-off Thyristors proved the viability of the process for larger area devices. |
| Download |
| Filename: | Unnamed file |
| Filesize: | 4.106 MB |
|
| Type |
Members Only |
| Date |
Last modified 2019-06-10 by System |
| |
 |