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STUDY ON THE CONTACT CHARACTERISTICS BETWEEN THE HIGH DOPING SILICON AND METAL
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| Author(s) |
Li yangping; Xu chuanxiang |
| Abstract |
The specific contact resistance of electrode of power silicon semiconductor devices has been measured with Shockley's transmission line model method. It is found that the specific contact resistance of Al-Si contact decreases with semiconductor surface doping concentration. And when surface doping concentration is 10to20CM-3, the specific contact resistance of Al-Si contact is about 10to-5 Ohm • CM². These experimental results agree with theoretical calculation obtained from the tunnelling conduction mechanism. For high doping silicon and different metal electrode, it is found that the specific contact resistance depends on the potential barrier height formed by silicon and different metal. The dependence of specific contact resistance on the temperature at which the Al-Si alloy is formed has also been tested and studied in this paper. The relation of the specific contact resistance to the temperature in the range of 400-750°C has been obtained. It is shown that there is an optimum temperature to form Al-Si alloy for different type conduction silicon. Based on these experimental results, an attempt is made to analysis the effect of various factors on the specific contact resistance. |
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| Filesize: | 1.376 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-10 by System |
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