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INTEGRITY OF THIN OXIDES ON HIGHLY RESISTIVE EPITAXIAL SILICON FOR POWER DEVICES
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| Author(s) |
T. Brozek; A. Jakubowski; Z.Sawicki |
| Abstract |
ln the paper the lntegrity of silicon dioxide, one of the best passivating and lnsulating material, is investigated for the case when the oxide is grown on lightly doped (below 10to13 cm to-3) silicon substrate. Experimental results obtained with the metal-oxide-semiconductor sandwich structure show that the dielectric strength of oxides under investigation is comparable to that of oxides used for other micro-electronic application and reaches 11 MV/cm. It is also shown that as a result of a typical low-temperature annealing an improvement of intrinsic breakdown parameters takes place, but an increase of defect number ln the oxide is simultanously observed. |
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| Filename: | Unnamed file |
| Filesize: | 2.375 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-10 by System |
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