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PROPERTIES OF THE SIPOS-SILICON INTERFACE AND THEIR IMPACT ON THE REVERSE CHARACTERISTIC OF POWER DEVICES
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| Author(s) |
G. H. Schulze; E. P. Burte |
| Abstract |
Effective densities of fixed interface charges and of interface traps present at Semi-Insulating POlycrystalline Silicon (SIPOS)-silicon interfaces were evaluated by applying the high frequency capacitance-voltage technique to metal SIPOS-silicon capacitors. Furthermore, mesa-structured high voltage diodes were passivated by SIPOS thin films. Leakage current and breakdown voltage as well as densities of fixed interface charges and of interface traps of the above devices depend on the temperature of an post-deposition annealing process. The experiments reveal a correlation between interface trap density and leakage current on the one hand and fixed interface charge density and breakdown voltage on the other hand. By applying a device simulation program, the breakdown voltage of the high voltage devices investigated was calculated in dependence on the density of fixed interface charges by assuming a insulating passivation film. Experimental and theoretical values of the breakdown voltage agree very well. The relationship between leakage current and interface trap density could also be confirmed by using the above mentioned program. |
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| Filename: | Unnamed file |
| Filesize: | 2.7 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-10 by System |
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