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RAPID THERMAL EPITAXIAL GROWTH FOR STATIC INDUCTION THYRISTORS
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| Author(s) |
L. Ye; D. W. McNeill; J. H. Montgomery; S. H. Raza; B. M. Armstrong; H. S. Gamble |
| Abstract |
A rapid thermal chemical vapour deposition system has been used for the growth of epitaxial silicon layers on silicon substrates at the temperature of 1035°C and pressure of 7mbar. The epitaxial layers are further used to fabricate buried grid static induction thyristors. The results from SIMS and micrograph show that no autodoping occurred during the epitaxial growth and I-V characteristics illustrate that the device operate satisfactorily. |
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| Filename: | Unnamed file |
| Filesize: | 3.126 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-10 by System |
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