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CORRELATION BETWEEN TECHNOLOGY AND THE ELECTRICAL CHARACTERISTICS OF A POWER POLYSILICON EMITTER BIPOLAR TRANSISTOR
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| Author(s) |
P. Austin; J. Caminade; J. L. Sanchez |
| Abstract |
The use of polysilicon emitter bipolar transistors permits a greater reduction of the emitter-base saturation current density value, this leading to a significant current gain increase. Our aim is to fabricate a polysilicon emitter bipolar transistor for power application. To do this, the PP-planar junction termination has been optimized to obtain a blocking voltage capability of about 600V. We have studied different polysilicon deposition steps compatible with the technology of power bipolar transistor fabrication and their influence on electrical characteristics. |
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| Filename: | Unnamed file |
| Filesize: | 2.514 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-03 by System |
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