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EXPERIMENTAL RESULTS USING MCTS IN HARD AND SOFT SWITCHING MODES
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| Author(s) |
F.-F. Protiwa; E. Seekamp |
| Abstract |
The huge advances in power electronics during the last decade are mainly due to the revolution in semiconductor technology. New power switching devices - like e.g. the IGBT - emerged in recent years making the task for system designers much easier. But the search for even better power electronic switches still goes on. One of the most promising attempts is the MCT, the MOS controlled thyristor. lts principal operation mode is based on the internal thyristor structure combined with MOS technology. The main advantage of the MCT lies in its extremely low on-state voltage and its ease of control. This paper presents practical experience using a p-type MCT. The investigations focus on the dynamic and static characteristics including a comparison of the behaviour in the hard and soft switching modes. Limitations to the switching frequency, short circuit behaviour and driving requirements are covered, too. |
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| Filename: | Unnamed file |
| Filesize: | 3.293 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-22 by System |
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