| Abstract |
This paper presents a study of commercially available Insulated Gate Bipolar Transistors (IGBT) when subjected to extreme stress. The purpose is to achieve an improved understanding of the consequences of different types of short-circuit situations. It is evident that different types of short-circuits will stress the IGBT in different ways. This is vital information for the design of short-circuit proof converters using the IGBT. Such a design will require both understanding of the underlying physical mechanisms and adequate testing procedures for the IGBT. To ensure safe operation of these transistors in different short-circuit situations, at least results from the following safe operatinq area measurements sbould be included in the data sheets. Firstly a measurement stating the combinations of current, voltage and temperature, which the IGBT can handle at turn-off from full conduction and extreme current levels. Secondly a measurement stating the combinations of temperature and load which the IGBT can handle at simultaneously high voltage and current. |
